SANI LAWAL s.lawal1@rgu.ac.uk
Research Student
A simulation study on the performance characteristics of 3D crystalline silicon (c-Si) solar cells.
Lawal, Sani Mohammed; Valizadeh, Shima; Fough, Nazila
Authors
Shima Valizadeh
Dr Nazila Fough n.fough1@rgu.ac.uk
Lecturer
Abstract
One of the most popular materials used is the wafer-based crystalline silicon (c-Si) solar cells that are dominant in the technology of the global PV market. In this paper, a 3D finite element method in COMSOL Multiphysics was used to simulate a crystalline silicon solar cell to investigate the impact absorber layer while keeping the electron and hole transport layer constant. The Variation of the c-Si-absorber layer thickness has influenced variation of output results based on the changed in the absorber layer. An efficiency of 25% at a temperature of 300K with a minimum short circuit current density of 18mA/cm2 and a maximum short circuit current of 36.2mA/cm2, where a power output of 9.5mW/cm2 and 19.4mW/cm2 respectively.
Citation
LAWAL, S.M., VALIZADEH, S. and FOUGH, N. 2024. A simulation study on the performance characteristics of 3D crystalline silicon (c-Si) solar cells. In Proceedings of the 31st IEEE (Institute of Electrical and Electronics Engineers) International conference on electronics, circuits, and systems (IEEE ICECS 2024), 18-20 November 2024, Nancy, France. Piscataway: IEEE [online], 10848762. Available from: https://doi.org/10.1109/ICECS61496.2024.10848762
| Presentation Conference Type | Conference Paper (published) |
|---|---|
| Conference Name | 31st IEEE (Institute of Electrical and Electronics Engineers) International conference on electronics circuits and systems 2024 (IEEE ICECS2024) |
| Start Date | Nov 18, 2024 |
| End Date | Nov 20, 2024 |
| Acceptance Date | Jul 29, 2024 |
| Online Publication Date | Jan 28, 2025 |
| Publication Date | Dec 31, 2024 |
| Deposit Date | Feb 20, 2025 |
| Publicly Available Date | Feb 20, 2025 |
| Print ISSN | 2994-5755 |
| Electronic ISSN | 2995-0589 |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Peer Reviewed | Peer Reviewed |
| Article Number | 10848762 |
| DOI | https://doi.org/10.1109/ICECS61496.2024.10848762 |
| Keywords | Absorber; Crystalline silicon solar cells; Electron; Finite element method; Hole transporter layer |
| Public URL | https://rgu-repository.worktribe.com/output/2709292 |
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© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
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