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Highly ordered good crystalline ZnO-doped WO3 thin films suitable for optoelectronic applications.

Kavitha, V. S.; Bose, R. Jolly; Sreedharan, R. Sreeja; Sudarsanakumar, C.; Prabhu, Radhakrishna; Pillai, V. P. Mahadevan

Authors

V. S. Kavitha

R. Jolly Bose

R. Sreeja Sreedharan

C. Sudarsanakumar

Radhakrishna Prabhu

V. P. Mahadevan Pillai



Abstract

Highly ordered ZnO-doped WO3 thin films with good crystalline quality are prepared using radio frequency magnetron sputtering technique, and its morphological and structural properties are studied using various characterization tools such as field emission scanning electron microscopy, energy-dispersive x-ray spectroscopy, x-ray diffraction technique, micro-Raman spectroscopy, and x-ray photoelectron spectroscopy. Morphological analysis shows a smooth surface for pure film, whereas the ZnO-doped films presents a dense distribution of grains of larger sizes with well-defined grain boundary. X-ray diffraction studies reveal the enhancement of crystalline quality of the films with increase in ZnO doping concentration up to 5 wt.%, beyond which the crystalline quality gets deteriorated. A phase modification from a single monoclinic WO3 phase to mixed monoclinic WO3 and W18O49 phases is observed for films with higher ZnO doping concentrations.

Journal Article Type Article
Publication Date May 31, 2019
Journal JOM
Print ISSN 1047-4838
Electronic ISSN 1543-1851
Publisher Springer Verlag
Peer Reviewed Peer Reviewed
Volume 71
Issue 5
Pages 1874-1884
Institution Citation KAVITHA, V.S., BOSE, R.J., SREEDHARAN, R.S., SUDARSANAKUMAR, C., PRABHU, R. and PILLAI, V.P.M. 2019. Highly ordered good crystalline ZnO-doped WO3 thin films suitable for optoelectronic applications. JOM journal of the minerals, metals and materials society [online], 71(5), pages 1874-1884. Available from: https://doi.org/10.1007/s11837-019-03425-8
DOI https://doi.org/10.1007/s11837-019-03425-8
Keywords ZnO-doped films; Crystalline; Morphological; Structural

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