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Effect of tungsten doping on the properties of In2O3 films.

Krishnan, R. Reshmi; Kavitha, V. S.; Chalana, S. R.; Prabhu, Radhakrishna; Pillai, V. P. Mahadevan

Authors

R. Reshmi Krishnan

V. S. Kavitha

S. R. Chalana

Radhakrishna Prabhu

V. P. Mahadevan Pillai

Abstract

Highly crystalline tungsten oxide (WO3)-doped indium oxide (In2O3) films are synthesized at room temperature by the RF magnetron sputtering technique. The structural and morphological properties of the as-deposited films and the films annealed at a temperature of 300°C are investigated in detail. X-ray diffraction analysis reveals the presence of a cubic bixbyite structure with preferred orientation along the (222) plane for both the as-deposited and annealed films. Moderate WO3 doping (1 wt.%) enhances the crystallinity of the as-deposited In2O3 films, whereas the crystallinity of the films systematically decreases with an increase in WO3 doping concentration beyond 1 wt.%. Raman spectral analysis discloses the modes of the cubic bixbyite In2O3 phase in the films. Atomic force microscopy micrographs show a smooth and dense distribution of smaller grains in the films. X-ray photoelectron spectroscopy reveals the existence of W5+ in the doped films. The undoped film is highly oxygen deficient. Variation in the concentration of oxygen vacancy can be associated with the degree of crystallinity of the films.

Journal Article Type Article
Publication Date May 31, 2019
Journal JOM
Print ISSN 1047-4838
Electronic ISSN 1543-1851
Publisher Springer Verlag
Peer Reviewed Peer Reviewed
Volume 71
Issue 5
Pages 1885-1896
Institution Citation KRISHNAN, R.R., KAVITHA, V.S., CHALANA, S.R., PRABHU, R. and PILLAI, V.P.M. 2019. Effect of tungsten doping on the properties of In2O3 films. JOM: journal of the minerals, metals and materials society [online], 71(5), pages 1885-1896. Available from: https://doi.org/10.1007/s11837-019-03426-7
DOI https://doi.org/10.1007/s11837-019-03426-7
Keywords Metal oxide materials; Nanoscale devices; Indium oxide; Thin films; Tungsten

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