R. Reshmi Krishnan
Effect of tungsten doping on the properties of In2O3 films.
Krishnan, R. Reshmi; Kavitha, V. S.; Chalana, S. R.; Prabhu, Radhakrishna; Pillai, V. P. Mahadevan
V. S. Kavitha
S. R. Chalana
V. P. Mahadevan Pillai
Highly crystalline tungsten oxide (WO3)-doped indium oxide (In2O3) films are synthesized at room temperature by the RF magnetron sputtering technique. The structural and morphological properties of the as-deposited films and the films annealed at a temperature of 300°C are investigated in detail. X-ray diffraction analysis reveals the presence of a cubic bixbyite structure with preferred orientation along the (222) plane for both the as-deposited and annealed films. Moderate WO3 doping (1 wt.%) enhances the crystallinity of the as-deposited In2O3 films, whereas the crystallinity of the films systematically decreases with an increase in WO3 doping concentration beyond 1 wt.%. Raman spectral analysis discloses the modes of the cubic bixbyite In2O3 phase in the films. Atomic force microscopy micrographs show a smooth and dense distribution of smaller grains in the films. X-ray photoelectron spectroscopy reveals the existence of W5+ in the doped films. The undoped film is highly oxygen deficient. Variation in the concentration of oxygen vacancy can be associated with the degree of crystallinity of the films.
|Journal Article Type||Article|
|Publication Date||May 31, 2019|
|Peer Reviewed||Peer Reviewed|
|Institution Citation||KRISHNAN, R.R., KAVITHA, V.S., CHALANA, S.R., PRABHU, R. and PILLAI, V.P.M. 2019. Effect of tungsten doping on the properties of In2O3 films. JOM: journal of the minerals, metals and materials society [online], 71(5), pages 1885-1896. Available from: https://doi.org/10.1007/s11837-019-03426-7|
|Keywords||Metal oxide materials; Nanoscale devices; Indium oxide; Thin films; Tungsten|
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