Growth of a silicon-gallium phosphide heterojunction by liquid and vapour phase epitaxial techniques.
(1977)
Thesis
LAMB, R.G. 1977. Growth of a silicon-gallium phosphide heterojunction by liquid and vapour phase epitaxial techniques. Robert Gordon's Institute of Technology, MPhil thesis. Hosted on OpenAIR [online]. Available from: https://doi.org/10.48526/rgu-wt-1993266
As the innovation of the semiconductor industry proceeds the semiconductor heterojunction is playing an increasingly important part. One such heterojunction, the silicon/gallium phosphide crystal, however, is still in early stages of investigation. I... Read More about Growth of a silicon-gallium phosphide heterojunction by liquid and vapour phase epitaxial techniques..